| 摘要 |
A semiconductor device such as a CMOS image sensor and a method of fabricating the same, in which a stable alignment mark is formed. The semiconductor device includes an isolation layer formed in a scribe lane region of a semiconductor substrate and having a groove, an insulating layer having a hole through which the groove is exposed and formed on the semiconductor substrate, and a metal layer formed on the groove and the hole. The groove is formed in the isolation layer and is used as an alignment mark formation region. Thus, although the thickness of an interlayer insulating layer is not thick, it can be compensated for by the groove formed in the isolation layer.
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