SEMICONDUCTOR DEVICE

摘要

A semiconductor device comprises an organic semiconductor element A having a source electrode and a drain electrode arranged on the surface of a substrate, a channel gap for dividing the source electrode and the drain electrode, an organic semiconductor layer arranged on the source electrode, the drain electrode and the channel gap, an insulating film arranged on the organic semiconductor layer, a gate electrode arranged on the insulating film, and a bank defining the organic semiconductor layer, wherein the height of the bank from the surface of the substrate is higher than the height of the channel gap from the surface of the substrate anda trench is formed in the bank; and an organic semiconductor element B having a source electrode or a drain electrode connected with the gate electrode of the organic semiconductor element A through the trench formed in the bank of the organic semiconductor element A.