| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To make one semiconductor device correspond to a plurality of kinds of power supply voltages. <P>SOLUTION: In order to reduce the channel concentration by forming a pocket region 7 of the same conductivity type as that of a channel region 6, formed in between the source region 4 and the drain region 5 in a region adjacent to the source region 4, the region between the source region 4 and the drain region 5 is made into an asymmetrical concentration profile whose impurity concentration is high on the source region 4 side and low on the drain region 5 side. This reduces the current generated by impact ionization, when a drain bias is applied and improves the hot carrier resistance, by suppressing the characteristic deterioration due to hot carriers, to be made to correspond to a plurality of kinds of power supply voltages. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
