| 摘要 |
PROBLEM TO BE SOLVED: To provide a group III-V nitride semiconductor device having a high breakdown voltage and a low on-voltage. SOLUTION: The device includes: first and second nitride semiconductor layers made of a nitride semiconductor laminated on a semi-insulating substrate or an insulating one; a third nitride semiconductor layer film-formed at temperature lower than that of the second nitride semiconductor layer; a first anode electrode that forms Schottky junction on the first nitride semiconductor layer exposed in a recess and has low Schottky barrier height; a second anode electrode that is connected to the first anode electrode and is made of metal that is the same as or different from that of the first anode electrode forming the Schottky junction in the third nitride semiconductor layer; and a cathode electrode forming ohmic junction in the first, second, or third nitride semiconductor layer. COPYRIGHT: (C)2008,JPO&INPIT |
