发明名称 Substrate processing apparatus, method of manufacturing semiconductor device, and heating apparatus
摘要 An object of the present invention is to improve substrate processing efficiency. A substrate processing apparatus has a reaction tube that processes a substrate inside, and a heating apparatus disposed so as to surround an external periphery of the reaction tube, so that at least a gas inlet tube is disposed on a side surface in an area in which the substrate is processed inside the reaction tube, and the heating apparatus has a heat insulator that surrounds the reaction tube, an inlet opening formed in the shape of a groove in the heat insulator from the lower end of the heating apparatus so as to avoid the gas inlet tube, and a heating element disposed between the heat insulator and the reaction tube.
申请公布号 US2008153314(A1) 申请公布日期 2008.06.26
申请号 US20070987493 申请日期 2007.11.30
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 HAYASHIDA AKIRA;UENO MASAAKI;SHIMADA MASAKAZU;ABURATANI YUKINORI;YAMADA TOMOYUKI;NAKASHIMA SIEYO;SUGISHITA MASASHI
分类号 H01L21/00;B01J19/00;F27B5/14 主分类号 H01L21/00
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