发明名称 |
Substrate processing apparatus, method of manufacturing semiconductor device, and heating apparatus |
摘要 |
An object of the present invention is to improve substrate processing efficiency. A substrate processing apparatus has a reaction tube that processes a substrate inside, and a heating apparatus disposed so as to surround an external periphery of the reaction tube, so that at least a gas inlet tube is disposed on a side surface in an area in which the substrate is processed inside the reaction tube, and the heating apparatus has a heat insulator that surrounds the reaction tube, an inlet opening formed in the shape of a groove in the heat insulator from the lower end of the heating apparatus so as to avoid the gas inlet tube, and a heating element disposed between the heat insulator and the reaction tube.
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申请公布号 |
US2008153314(A1) |
申请公布日期 |
2008.06.26 |
申请号 |
US20070987493 |
申请日期 |
2007.11.30 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
HAYASHIDA AKIRA;UENO MASAAKI;SHIMADA MASAKAZU;ABURATANI YUKINORI;YAMADA TOMOYUKI;NAKASHIMA SIEYO;SUGISHITA MASASHI |
分类号 |
H01L21/00;B01J19/00;F27B5/14 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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