Semiconductor element has one group III nitride layer section, which divides p conducting group III nitride layer sections of group III nitride layer, producing interface of indexing

摘要

The semiconductor element has a c-axis oriented group III nitride layer (104), which is assembled from a number of c-axis oriented group III nitride layer sections (103), lying adjacent to each other. One group III nitride layer section divides p-conducting group III nitride layer sections of the group III nitride layer, producing an interface of indexing, having another group III nitride layer sections, temporarily separated from the former group III nitride layer sections. An independent claim is also included for a method for producing a c-axis oriented group III nitride layer.