METHOD FOR PROCESSING SURFACE OF GAN SINGLE CRYSTAL SUBSTRATE USING REACTIVE ION ETCHING APPARATUS

摘要

A method for processing a surface of a GaN single crystal substrate using a reactive ion etching apparatus is provided to support effectively the GaN single crystal substrate by forming a groove corresponding to a size of the GaN single crystal substrate. A method for processing a surface of a GaN single crystal substrate(200) includes a process for polishing the surface of the GaN single crystal substrate attached on a supporting plate through an adhesive unit, and a process for etching a residual damage layer on the surface of the GaN single crystal substrate. The supporting plate includes a groove corresponding to the GaN single crystal substrate. A step of the supporting plate is smaller than a thickness of the GaN single crystal substrate. The polishing process includes a process for irradiating ultraviolet rays on the polished surface of the GaN single crystal substrate.