| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device excellent in flatness of an insulation film formed on a capacitor even when the semiconductor device is micronized, and to provide its manufacturing method. <P>SOLUTION: The semiconductor device comprises the capacitor having: a lower electrode 109 formed in a shape having a concave cross-section along an opening 108 opened upper a semiconductor substrate 101; a capacitance insulation film 110 formed on the inner surface and the upper surface of the lower electrode 109; and an upper electrode 111 formed on the capacitance insulation film 110. The upper electrode 111 is composed of a first conductive film 111a formed on the inner surface of the capacitance insulation film 110 and embedding the opening 108, and a second conductive film 111b formed in a range from the upper surface of the first conductive film 111a to the upper surface of the capacitance insulation film 109. <P>COPYRIGHT: (C)2008,JPO&INPIT |
