| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress decrease in thickness of a film in a recessed-type electrode using a high melting point metal. <P>SOLUTION: A semiconductor device includes: a semiconductor substrate 100; a first interlayer dielectric 101 formed on the semiconductor substrate 100; a plug 102 formed in the first interlayer dielectric 101 to reach the semiconductor substrate 100; an oxygen barrier film 103 formed on the plug 102; a second interlayer dielectric 105 formed on the first interlayer dielectric 101; an opening 104 formed in the second interlayer dielectric 105 to reach the oxygen barrier film 103; a lower electrode 106 covering at least a side wall of the opening 104; a capacitance insulating film 107 made of a ferroelectric material or a high dielectric material and formed in the opening 104; and an upper electrode 108 formed on the capacitance insulating film 107. In the opening 104, at least one protrusion 105a made by leaving part of the second interlayer dielectric 105 is further provided, and the lower electrode 106 covers a side surface of the protrusion 105a, too. <P>COPYRIGHT: (C)2008,JPO&INPIT |
