SOLID-STATE IMAGING DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a solid-state imaging device and its manufacturing method capable of preventing the occurrence of an etching residue without an etching time increased when a level difference adjustment film is formed. SOLUTION: The solid-state imaging device related to this invention includes a semiconductor substrate 101; a photoelectric converting unit 102 formed on the semiconductor substrate 101 and converting a light to a signal charge; an electrode 111 for reading the signal charge converted by the photoelectric converting unit 102; a first insulating film 114 formed over the photoelectric converting unit 102 and the electrode 111, and having a convex curve shape facing downward on the upper surface; a level difference adjustment film 115 formed over an electrode 111 through the first insulating film 114; a second insulating film 116 formed over the level difference adjustment film 115 and the first insulating film 114; and a third insulating film 117 formed on the second insulating film 116, composed of a material having a refractive index different from that of the material for comprising the second insulating film 116, and having a microlens shape contacting with the second insulating film 116 convex downward. COPYRIGHT: (C)2008,JPO&INPIT