| 摘要 |
A process for stripping photoresist from a substrate is provided. A processing system for implanting a dopant into a layer of a film stack, annealing the stripped film stack, and stripping the implanted film stack is also provided. When high dopant concentrations are implanted into a photoresist layer, a crust layer may form on the surface of the photoresist layer that may not be easily removed. The methods described herein are effective for removing a photoresist layer having such a crust on its surface.
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