| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device of W-CSP in which variation in characteristics of a high-frequency circuit is suppressed and rewiring is minimized. <P>SOLUTION: The semiconductor device comprises a semiconductor substrate having a major surface including a high-frequency circuit region 502 and a low-frequency circuit region 501, an insulating layer 301 formed on the major surface, and a sealing resin 701 covering the insulating film 301. The semiconductor device further comprises a plurality of external terminals 204 formed directly above the electrode pad 104 of a high-frequency circuit to project from the surface of the sealing resin 701 and connected electrically with the electrode pad 104, and a plurality of external terminals 203 formed directly above the electrode pad 103 of a low-frequency circuit to project from the surface of the sealing resin 701 and connected electrically with the electrode pad 103. In addition, metal wiring 205 (conductive layer) connecting the high-frequency circuit with the electrode pad 104 electrically is formed on the major surface of the semiconductor substrate. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
