| 摘要 |
PROBLEM TO BE SOLVED: To form an insulating region with a gap section in the inside by oxidizing the inside of a trench formed on a silicon semiconductor layer in an extent that the trench is not embedded completely, and ensure the necessary thickness of the insulating region. SOLUTION: In a semiconductor device, a plurality of the trenches are formed on the semiconductor layer 11 and unified by thermal oxidation, and the insulating regions 18 and 19 with the gap sections 23 are formed inside. The thicknesses of the insulating regions can be controlled by the depths of trenches, and the insulating regions thicker than a conventional LOCOS method can be formed without increasing a crystal defect or the like. A stray capacitance can be reduced by forming the insulating regions below an electrode pad. The stray capacitance can further be reduced by the gap sections in the insulating regions. COPYRIGHT: (C)2008,JPO&INPIT |
