| 摘要 |
The invention provides a magnetoresistive element including a seed layer having a flat surface, which makes it possible to improve the flatness of all of the elements. A seed layer is formed in a two-layer structure of a first seed layer that is formed on a lower shield layer and a second seed layer that is formed underneath an anti-ferromagnetic layer, and the second seed layer is formed of ruthenium (Ru). According to this structure, the flatness of the surface of the seed layer is improved, which makes it possible to improve the flatness of interfaces between layers of an element formed on the seed layer. As a result, it is possible to manufacture a magnetoresistive element having a high dielectric breakdown voltage and high operational reliability.
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