发明名称 SUBSTRATE PROCESSING APPARATUS, FOCUS RING HEATING METHOD, AND SUBSTRATE PROCESSING METHOD
摘要 A substrate processing apparatus that can accurately control the temperature of a focus ring without causing abnormal electric discharge and the back-flow of radio frequency electrical power during the application of radio frequency electrical power. A wafer is mounted on a mounting stage disposed in a housing chamber. An annular focus ring is mounted on the mounting stage in such a manner as to surround the peripheral portion of the mounted wafer. The pressure in the housing chamber is reduced, radio frequency electrical power is applied to the mounting stage, and the focus ring generates heat by itself.
申请公布号 US2008149598(A1) 申请公布日期 2008.06.26
申请号 US20070950773 申请日期 2007.12.05
申请人 TOKYO ELECTRON LIMITED 发明人 HAYASHI DAISUKE;NAGASEKI KAZUYA
分类号 C23F1/00;C23F1/08;H05B6/38 主分类号 C23F1/00
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