| 摘要 |
A method of fabricating a magnetic random access memory (MRAM) is provided. A metal interconnection, a magnetic tunnel junction layer, and an interlayer dielectric layer are formed on a semiconductor substrate. A portion of the interlayer dielectric layer is selectively removed, leaving protruded regions. A metal layer is then formed on the interlayer dielectric layer and planarized using the protruded portions of the interlayer dielectric layer as a target.
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