| 摘要 |
A method for depositing, on a substrate, a reflective multilayer film of a reflective mask blank for EUV lithography by sputtering, comprises: depositing a reflective multilayer film in such a state that a substrate has been deformed so as to be subjected to a stress, which is directed to the opposite direction to a stress applied to the substrate by deposition of the reflective multilayer film; and returning the substrate to the shape before deformation, after deposition of the reflective multilayer film.
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