MEMORY SYSTEM WITH FLASH MEMORY CAPABLE OF COMPENSATING REDUCTION OF READ MARGIN BETWEEN STATES DUE TO HOT TEMPERATURE STRESS,申请号KR20060007414-传众专利搜索

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发明名称	MEMORY SYSTEM WITH FLASH MEMORY CAPABLE OF COMPENSATING REDUCTION OF READ MARGIN BETWEEN STATES DUE TO HOT TEMPERATURE STRESS
摘要
申请公布号	KR100841336(B1)	申请公布日期	2008.06.26
申请号	KR20060007414	申请日期	2006.01.24
申请人		发明人
分类号	G11C16/10	主分类号	G11C16/10
代理机构		代理人
主权项
地址

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