| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress the influence of a wiring resistance owing to large currents flowing to the output circuit of a semiconductor device. <P>SOLUTION: A bonding pad VP to be connected to a power supply potential is formed at the central part of power supply wiring VL connecting the PMOSp1 of an amplification part 1 to the source of a PMOSp2 of amplification part 2, and a bonding pad GP to be connected to a ground potential is formed at the central part of ground wiring GL connecting the NMOSn1 of the amplification part 1 to the source of the NMOSn2 of the amplification part 2. Thus, a power source is supplied from the boding parts VP and GP through an individual line to the PMOSp1 and NMOSn1 of the amplification part 1 and the PMOSp2 and the NMOSn2 of the amplification part 2 so that almost the same power supply voltages can be supplied to the amplification parts 1 and 2. Therefore, it is possible to suppress the influence of a wiring resistance owing to large currents flowing to an output circuit, and to prevent the deterioration of characteristics. Furthermore, the boding pads VP and GP are arranged at the upper part of the element so that it is possible to reduce the layout area. <P>COPYRIGHT: (C)2008,JPO&INPIT |
