| 摘要 |
PROBLEM TO BE SOLVED: To provide the method of manufacturing a semiconductor device in which an area occupied by first and second pad electrodes having an insulating film arranged therebetween on a semiconductor substrate is reduced. SOLUTION: A first length L1 of the upper surface 21a of an intermediate insulating film can be maintained to an essential spacing SS and a second length L2 of the lower surface 21b of the intermediate insulating film can be maintained to the essential spacing SS or more by forming a first concavity 32 and a second concavity 35 toward a depth direction YY in such a manner that the concavities narrow toward their ends in a state in which a photoresist film 51 having the essential spacing SS is formed on the intermediate insulating film 21. Thus, the insulating properties of a first pad electrode 33 and a second pad electrode 36 can be secured without setting the first length L1 of the upper surface 21a of the intermediate insulating film to be a very large spacing WW as before. In other words, an occupied area which is the total area of the upper surface 33a of the first pad electrode, the upper surface 21a of the intermediate insulating film, and the upper surface 36a of the second pad electrode can be reduced to be smaller than before. COPYRIGHT: (C)2008,JPO&INPIT
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