发明名称 |
Nitride based semiconductor device and process for preparing the same |
摘要 |
A process for preparing a nitride based semiconductor device in accordance with the present invention comprises growing a high temperature AlN single crystal layer on a substrate; growing a first GaN layer on the high temperature AlN single crystal layer in a first V/III ratio, under a first pressure of 300 Torr or more, such that the predominant direction of growth is the lateral direction; and growing a second GaN layer on the first GaN layer in a second V/III ratio lower than the first V/III ratio, under a second pressure lower than the first pressure such that the predominant direction of growth is the lateral direction.
|
申请公布号 |
US2008150086(A1) |
申请公布日期 |
2008.06.26 |
申请号 |
US20070987706 |
申请日期 |
2007.12.04 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
LEE JAE HOON;LEE JUNG HEE;CHO HYUN ICK |
分类号 |
H01L29/20;C23C16/34;H01L21/205 |
主分类号 |
H01L29/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|