发明名称 |
METHOD OF FABRICATING OPENINGS AND CONTACT HOLES |
摘要 |
A semiconductor substrate having an etch stop layer and at least a dielectric layer disposed from bottom to top is provided. The dielectric layer and the etching stop layer is then patterned to form a plurality of openings exposing the semiconductor substrate. A dielectric thin film is subsequently formed to cover the dielectric layer, the sidewalls of the openings, and the semiconductor substrate. The dielectric thin film disposed on the dielectric layer and the semiconductor substrate is then removed while the dielectric thin film disposed on the sidewalls remains.
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申请公布号 |
US2008153295(A1) |
申请公布日期 |
2008.06.26 |
申请号 |
US20080042340 |
申请日期 |
2008.03.05 |
申请人 |
CHANG FENG-YI;CHOU PEI-YU;LIAO JIUNN-HSIUNG;FENG CHIH-WEN;LIN YING-CHIH;TSAO PO-CHAO |
发明人 |
CHANG FENG-YI;CHOU PEI-YU;LIAO JIUNN-HSIUNG;FENG CHIH-WEN;LIN YING-CHIH;TSAO PO-CHAO |
分类号 |
H01L21/768;H01L21/311 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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地址 |
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