发明名称 Manufacturing Method of Semiconductor Device
摘要 A light absorption layer is formed over a substrate, the light absorption layer is selectively irradiated with a laser beam, and a region of the light absorption layer, which is irradiated with the laser beam, is removed. By adding an impurity element imparting one conductivity type or an inert element to a remaining part of the light absorption layer, a tensile stress of the light absorption layer is made lower than that before irradiation with the laser beam.
申请公布号 US2008153039(A1) 申请公布日期 2008.06.26
申请号 US20070957884 申请日期 2007.12.17
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 AKIMOTO KENGO
分类号 G03F7/00 主分类号 G03F7/00
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