发明名称 |
SOLID-STATE IMAGING DEVICE AND ITS MANUFACTURING METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device suppressing a decrease in output sensitivity caused by the downsizing of a pixel size by suppressing an increase in noise. <P>SOLUTION: The solid-state imaging device related to this invention comprises a semiconductor substrate 101; a photoelectric converting unit 102 formed on the semiconductor susbtrate 101 and converting light to a signal charge; a first insulating film 115 formed over the photoelectric converting unit 102; and a second insulating film 116 formed on the first insulating film 115, consisting of a material having a refractive index different from that of a material for comprising the first insulating film 115, and having a microlens convex downward contacting with the first insualting film 115. The top of the microlens shape is a planar shape, and other than the top of the microlens shape is a curved surface shape. <P>COPYRIGHT: (C)2008,JPO&INPIT |
申请公布号 |
JP2008147395(A) |
申请公布日期 |
2008.06.26 |
申请号 |
JP20060332485 |
申请日期 |
2006.12.08 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
HONJO MAMORU;NAKAGAWA ATSUO;ICHIKAWA MICHIYO;YAMADA TORU |
分类号 |
H01L27/14;H01L31/09;H04N5/335;H04N5/359;H04N5/369 |
主分类号 |
H01L27/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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