| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can reduce or suppress leakage current, when the semiconductor device is used in a high-temperature environment. SOLUTION: In the method of manufacturing a power management semiconductor device, including a CMOS when a source high-concentration diffusion layer and a drain high-concentration diffusion layer are set to have a higher concentration, a leakage current, between the source high-concentration diffusion layer and a substrate or at the source and drain high-concentration diffusion layers, can be reduced or suppressed, even if the semiconductor device is used at a high temperature state. COPYRIGHT: (C)2008,JPO&INPIT
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