| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device that can reduce the on-state resistance in a p-type silicon carbide channel layer, while keeping withstand voltage characteristics. SOLUTION: The silicon carbide semiconductor device is provided with the n-type silicon carbide drift layer 2, formed on the surface of the n-type silicon carbide substrate 1; the p-type silicon carbide channel layer 4 formed on the p-type silicon carbide drift layer 2; and a p-type silicon carbide base layer 3, that is in contact with the lower surface of the p-type silicon channel layer 4 and is provided in the p-type silicon carbide drift layer 2. An n-type silicon carbide source layer 5 is formed on the p-type silicon carbide channel layer 4. A source electrode 9 is electrically connected to the n-type silicon carbide source layer 5 and to the p-type silicon carbide base layer 3, and the drain electrode 10 is provided on the rear surface of the n-type silicon carbide substrate 1. A gate electrode 9 is formed on the inner wall of a trench 12, that penetrates the p-type silicon carbide channel layer 4 to the n-type silicon carbide drift layer 2 from the surface of the n-type silicon carbide source layer 5 via the gate insulation film 8. COPYRIGHT: (C)2008,JPO&INPIT
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