| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming an amorphous silicon thin film wherein dehydrogenation treatment time is short. SOLUTION: An amorphous silicon thin film is formed on the surface of a substrate 4 in a vacuum atmosphere by a CVD (chemical vapor deposition) process, thereafter, while placing the substrate 4 in the vacuum atmosphere, the temperature is raised to the one at which the amorphous silicon thin film is formed or above, and dehydrogenation treatment is performed. Since the dehydrogenation treatment is performed in the vacuum atmosphere before the temperature of the substrate is lowered, the treatment time can be shortened. In this case, when the dehydrogenation treatment is performed in such a manner that infrared rays 22 are emitted while moving the substrate 4, an amorphous silicon formation device 1 can be made compact. COPYRIGHT: (C)2008,JPO&INPIT
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