| 摘要 |
A stack for a bistable microelectronic switch is fabricated by providing a first metal electrode on a supporting substrate. A bistable macrocyclic compound is printed over the first electrode using a high speed printing process. A conductive polymer is then printed over the bistable macrocyclic compound using a high speed printing process, and a second electrode is then formed on the conductive polymer. Copper phthalocyanine is one bistable compound, and a combination of poly-(3,4-ethylenedioxythiophene) and poly-(styrenesulphonic acid) is the conductive polymer. The upper and lower electrodes are formed in a crossbar formation to create an addressable random access memory device. When a voltage less than a switching voltage is applied between two intersecting electrodes, the resistance is very high, and when a voltage greater than the switching voltage is applied, the resistance is generally two orders of magnitude lower.
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