| 摘要 |
Provided are a semiconductor device with reduced power noise, which can be used in a high-speed device with an operating frequency of at or above about 1 GHz and does not have any spatial restriction due to signal patterns or other structures. The semiconductor device includes a power panel, an insulating layer, and a stub unit. The power panel has electrical devices formed thereon. The insulating layer covers the power panel. The stub unit is formed on the insulating layer and has one or more fan-shaped stubs electrically connected to the power panel through a via contact penetrating the insulating layer.
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