| 摘要 |
[PROBLEMS] To provide a process for producing a resistance change device that is capable of reducing the amount of current flowing per cell as compared with that of the prior art. [MEANS FOR SOLVING PROBLEMS] In the production of resistance change memory (ReRAM) adapted to store data through resistance change of resistance change device (71), first, transistor (T), interlayer insulating films (61, 65), W-plugs (62a, 62b, 66), etc. are formed on semiconductor substrate (50). Subsequently, Pt film (67) as an under electrode of the resistance change device (71) is formed, and thereupon transition metal film (Ni film) (68) is formed. Thereafter, the surface of the transition metal film (68) is oxidized to thereby form transition metal oxide film (69), and thereupon Pt film (70) as an upper electrode is formed. |
