| 摘要 |
A single electron transistor device for sensing at least one particle, includes at least two electrodes positioned with a gap formed between the electrodes and an activation object positioned in the gap with an insulating layer between the activation object and each electrode. The activation object which is able to transfer electrons is arranged with at least one binding structure bonded to it for receiving the at least one particle. The electrodes are formed with an inter distance of less than 50 nm and the electrodes are connectable directly or indirectly to a signal acquisition system. The sensing device is arranged to allow a tunnelling current proportional to the presence of the at least one particle in the binding structure, to flow through the activation object. A method, and system using a single electron transistor device fabricated with micro/nano fabrication methods are also disclosed. |
