| 摘要 |
<p>The invention relates to the fabrication of electronic components having a very high integration density, especially an image sensor. The component comprises two superposed integrated circuits, one of which (the image sensor) is formed on the front face of a first, thinned silicon substrate (12) and the other of which is produced on the front face of a second substrate (30), with an insulating planarization layer (28, 48) interposed between the front faces of the two substrates. The silicon (12) of the rear face of the thinned substrate is locally open above a first conducting pad (P1) located in the thinned substrate and above a second conducting pad (P2) located in the second substrate. A portion of a conducting layer (50), deposited on the two pads, electrically connects them so as to provide the interconnection between the two circuits. The external connection pads (PL1) may also be formed in this conducting layer (50). Application to the connection of an image sensor on thinned silicon with an integrated image processing circuit.</p> |
