METHOD FOR FORMING MULTILAYER FILM AND APPARATUS FOR FORMING MULTILAYER FILM

摘要

Disclosed are a method for forming a multilayer thin film and an apparatus for forming a multilayer thin film, each enables to improve dielectric characteristics and piezoelectric characteristics of a thin film which is composed of a lead-based perovskite complex oxide. Specifically disclosed is a method for forming a multilayer thin film, which comprises formation of a lower electrode layer (32b) composed of a noble metal on top of a substrate (S) by sputtering a lower electrode layer target (TG2), and formation of a lead-based complex oxide layer (33) on the lower electrode layer (32b) by sputtering an oxide layer target (TG3) containing lead. The thickness of the lower electrode layer (32b) is regulated to 10-30 nm, while the thickness of the lead-based complex oxide layer (33) is regulated to 0.2-5.0 µm.