| 摘要 |
<p>A dual-bit memory device is provided which includes trench isolation material disposed near bit line contact areas. For example, in one implementation a semiconductor memory device (600) is provided in which each memory cell can store two bits of information. The memory device comprises a substrate (554), first and second buried bit lines (501, 502) in the substrate (554), a first bit line contact (580) on the first buried bit line (501), a second bit line contact (582) on the second buried bit line (502), and an insulator region (576) disposed in the substrate (554) between the first buried bit line (501) and the second buried bit line (502). The insulator region (576) prevents a current from flowing between the first buried bit line (501) and the second buried bit line (502).</p> |
