Integrierte Halbleiterschaltungsanordnung sowie Verfahren zu deren Herstellung

摘要

The arrangement (1) has a semiconductor area (20) that has an effective area (22), and provided with a semiconductor substrate (21). The effective area has a lower surface (22b) directly and indirectly formed on the surface or top side (21b) of the substrate. A semiconductor circuit (30) is formed on the effective area. The effective area or some of it is formed with a stress-compensated and low-resistant contact arrangement for the semiconductor circuit. The effective area is formed with epitaxial area. The contact arrangement has a session layer or bond layer with hidden or buried oxide. An independent claim is included for the semiconductor IC arrangement manufacture.