| 发明名称 |
E-FUSE WITH REVERSE BIAS P-N JUNCTION |
| 摘要 |
An e-fuse (200) for an integrated circuit is formed with a reverse P-N junction in the semiconductor body (205) between fuse contacts (235) and below the conductive (for example, silicide) layer (230), so that when the fuse is blown (that is, the conductive layer melts), conduction through the underlying body is prevented. |
| 申请公布号 |
WO2006039669(A3) |
申请公布日期 |
2008.06.26 |
| 申请号 |
WO2005US35534 |
申请日期 |
2005.09.30 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED;MEHRAD, FREIDOON;ROUSE, RICHARD;CHURCHILL, ROBERT, B. |
发明人 |
MEHRAD, FREIDOON;ROUSE, RICHARD;CHURCHILL, ROBERT, B. |
| 分类号 |
H01L29/72;H01L21/82;H01L21/8238;H01L23/58;H01L29/00 |
主分类号 |
H01L29/72 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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