SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SRAM CELL

摘要

PROBLEM TO BE SOLVED: To solve the problem that a current leakage may probably occur from an interconnection layer to a well region of a semiconductor substrate in a common contact formation portion due to the wear of a film of the side wall when forming an opening portion TH.

SOLUTION: An SRAM cell is provided with a first interconnection layer for connecting a gate electrode of a first transistor and a diffusion region of a second transistor in a first opening portion. In the first opening portion, the first interconnection layer is formed away from a principal plane of the semiconductor substrate whereon the first transistor and the second transistor are to be formed.

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