COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a compound semiconductor light emitting element with good yield in a manufacturing process and having an excellent light emitting output.

SOLUTION: The compound semiconductor light emitting element is characterized by that a light emitting element consisting of an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer made of a compound semiconductor which are laminated on a substrate so that the n-type and p-type semiconductor layers sandwich the light emitting layer and including a transparent electrode of a first conductivity type and an electrode of a second conductivity type has the transparent electrode of the first conductivity type made of an IZO film containing In2O3crystals of a bixbyite structure.

COPYRIGHT: (C)2008,JPO&INPIT