| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device forming a silicide layer on source and drain layers while maintaining a shallow extension layer in a p-type FET and suppressing junction leak. SOLUTION: A semiconductor device of the present invention includes a gate 2, an extension layer 4, source/drain layers 6, and a silicide layer 8. The gate 2 is provided on an n-type semiconductor substrate 1 via a gate insulating film 3. The extension layer 4 is provided in a lower part of a side wall 5 on both sides of the gate 2, and is formed into p-type. The source/drain layers 6 are provided in contact with outside of the extension layer 4, and is formed into p-type. The silicide layer 8 is provided on a surface portion of the source/drain layers 8. The extension layer 4 includes a suppression element for suppressing diffusion of p-type impurities of the extension layer 4. The silicide layer 8 does not include the suppression element. COPYRIGHT: (C)2008,JPO&INPIT
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