Stacked-die packages with silicon vias and surface activated bonding

摘要

A system may include a first integrated circuit die including a plurality of silicon vias and a first surface activated bonding site coupled to the plurality of silicon vias, and a second integrated circuit die including a second surface activated bonding site coupled to the first surface activated bonding site. A system may further include an integrated circuit package substrate coupled to the plurality of silicon vias, and a plurality of wirebonds coupled to the integrated circuit package substrate and to the first integrated circuit die.