| 摘要 |
In one aspect, the method comprises etching a trench into a scribe street located between dies formed on a semiconductor wafer. The dies each have circuitry, and the etching is conducted to a depth within the semiconductor wafer that extends beyond a depth of the circuitry. The etch forms an edge of the die. A passivation layer is placed on the edge of the die. A back surface of the semiconductor wafer is removed until it intersects the trench, which separates the dies from the wafer. The removing process does not remove the passivation layer from the edge of the die.
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