| 摘要 |
In a wafer processing method of radiating a pulsed-laser beam to a wafer from a back surface of a silicon substrate to form via holes reaching respective bonding pads, a plurality of devices being formed on a surface of the silicon substrate, the bonding pads being formed on each of the devices, a thickness of said bonding pad is set as being equal to or larger than 5 mum, a wavelength of the pulsed-laser beam is set to 355 nm, and an energy density per one pulse of the pulsed-laser beam is set in a range of 20 to 35 J/cm<SUP>2</SUP>. |
