| 摘要 |
<p>A method for determining an exposure condition and a computer-readable storage media storing a program for determining the exposure condition are provided to calculate a phase projected on a wafer and electric characteristic of a pattern so as to improve the device manufacturing yield. A pattern image projected on a wafer is calculated by an optical simulation(S102). An image projected on the wafer is calculated through a projection optical system. Electric characteristic of the pattern is calculated based on the image projected on the wafer(S103). It is judged whether the electric characteristic is proper(S104). After adjusting a set exposure condition, a new exposure condition is calculated(S106).</p> |
