发明名称 SEMICONDUCTOR INSPECTION DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a durable semiconductor inspection device capable of performing an accurate diagnosis. SOLUTION: The semiconductor inspection device has a plurality of probes and an electron microscope, such as a scanning or transmission type microscope, for observing a specimen, thus measuring electricity at a minute section of a semiconductor device, or the like by bringing the probes into contact with the specimen. In the semiconductor inspection device, the probes have at least a substrate, a carbon nanotube fixed to the substrate, and a metal conductive surface film. The surface film is made of a first metal layer combined with carbon, and a highly conductive second metal layer. As examples of the first metal layer, Ti, Cr, Mo, Nb, Ta or Sn is listed, while as examples of the second metal layer, gold, palladium, iridium, and platinum are listed. The use of the carbon nanotube prevents plastic deformation, allows the probe to conduct electricity easily, and improves the performance of a semiconductor device. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008145208(A) 申请公布日期 2008.06.26
申请号 JP20060331297 申请日期 2006.12.08
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 HIDAKA KISHIO;HIROOKA MASAYUKI;HAYASHIBARA MITSUO
分类号 G01R1/067;G01R31/26;G01R31/28 主分类号 G01R1/067
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