| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic thin-film transistor which can be manufactured by a simple method, and excellent in transistor characteristics and secular stability. SOLUTION: The organic thin-film transistor has a gate electrode, a gate insulating layer, a source electrode, a drain electrode and an organic semiconductor layer on a substrate. A method of manufacturing the organic thin-film transistor has a step of providing an insulating material layer as a constituent layer and providing the source electrode and the drain electrode on one part of the same surface of the insulating material layer, a step of embedding the source electrode and the drain electrode into the insulating material layer, and a step of planarizing the insulating material layer having the source and drain electrodes embedded therein. COPYRIGHT: (C)2008,JPO&INPIT
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