Doped phase change material and pram including the same

摘要

Provided are a doped phase change material and a phase change memory device including the phase change material. The phase change material, which may be doped with Se, has a higher crystallization temperature than a Ge₂Sb₂Te₅ (GST) material. The phase change material may be In_XSb_YTe_ZSe_100-(X+Y+Z). The index X of indium (In) is in the range of 25 wt %<=X<=60 wt %. The index Y of antimony (Sb) is in the range of 1 wt %<=Y<=17 wt %. The index Z of tellurium (Te) is in the range of 0 wt %