发明名称 |
Semiconductor Device and Method of Manufacturing the Same |
摘要 |
In the substrate and the epitaxial layer, isolation regions are formed to divide the substrate and the epitaxial layer into a plurality of element formation regions. Each of the isolation regions is formed by connecting first and second P type buried diffusion layers with a P type diffusion layer. By disposing the second P type buried diffusion layer between the first P type buried diffusion layer and the P type diffusion layer, a lateral diffusion width of the first P type buried diffusion layer is reduced. This structure allows a formation region of the isolation region to be reduced in size.
|
申请公布号 |
US2008150083(A1) |
申请公布日期 |
2008.06.26 |
申请号 |
US20070961516 |
申请日期 |
2007.12.20 |
申请人 |
SANYO ELECTRIC CO., LTD.;SANYO SEMICONDUCTOR CO., LTD. |
发明人 |
SOMA MITSURU;HATA HIROTSUGU;AMATATSU YOSHIMASA |
分类号 |
H01L21/331;H01L29/735 |
主分类号 |
H01L21/331 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|