发明名称 |
Al-doped charge trap layer, non-volatile memory device and methods of fabricating the same |
摘要 |
Provided is an aluminum (Al) doped charge trap layer, a non-volatile memory device and methods of fabricating the same. The charge trap layer may include a plurality of silicon nano dots that trap charges and a silicon oxide layer that covers the silicon nano dots, wherein the charge trap layer is doped with aluminum (Al). The non-volatile memory device may include a substrate including a source and a drain on separate regions of the substrate, a tunneling film on the substrate contacting the source and the drain, the charge trap layer according to example embodiments, a blocking film on the charge trap layer, and a gate electrode on the blocking film.
|
申请公布号 |
US2008150010(A1) |
申请公布日期 |
2008.06.26 |
申请号 |
US20070892849 |
申请日期 |
2007.08.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE EUN-HA;BAIK HION-SUCK;SEOL KWANG-SOO;PARK SANG-JIN;PARK JONG-BONG;YANG MIN-HO |
分类号 |
H01L29/792;B32B5/16;H01L21/31;H01L21/336 |
主分类号 |
H01L29/792 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|