发明名称 INTEGRATED CIRCUIT SYSTEM WITH MEMORY SYSTEM
摘要 A method for forming an integrated circuit system is provided including forming a substrate having a core region and a periphery region, forming a charge storage stack over the substrate in the core region, forming a gate stack with a stack header having a metal portion over the substrate in the periphery region, and forming a memory system with the stack header over the charge storage stack.
申请公布号 US2008150011(A1) 申请公布日期 2008.06.26
申请号 US20070958646 申请日期 2007.12.18
申请人 SPANSION LLC;ADVANCED MICRO DEVICES, INC. 发明人 CHAN SIMON SIU-SING;XUE LEI;SUH YOUSEOK;JOSHI AMOL RAMESH;SHIRAIWA HIDEHIKO;SACHAR HARPREET;CHANG KUO-TUNG;WANG CONNIE PIN CHIN;BESSER PAUL R.;FANG SHENQING;DING MENG;ORIMOTO TAKASHI;ZHENG WEI;CHEUNG FRED TK
分类号 H01L27/115;H01L21/8247 主分类号 H01L27/115
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