发明名称 |
INTEGRATED CIRCUIT SYSTEM WITH MEMORY SYSTEM |
摘要 |
A method for forming an integrated circuit system is provided including forming a substrate having a core region and a periphery region, forming a charge storage stack over the substrate in the core region, forming a gate stack with a stack header having a metal portion over the substrate in the periphery region, and forming a memory system with the stack header over the charge storage stack. |
申请公布号 |
US2008150011(A1) |
申请公布日期 |
2008.06.26 |
申请号 |
US20070958646 |
申请日期 |
2007.12.18 |
申请人 |
SPANSION LLC;ADVANCED MICRO DEVICES, INC. |
发明人 |
CHAN SIMON SIU-SING;XUE LEI;SUH YOUSEOK;JOSHI AMOL RAMESH;SHIRAIWA HIDEHIKO;SACHAR HARPREET;CHANG KUO-TUNG;WANG CONNIE PIN CHIN;BESSER PAUL R.;FANG SHENQING;DING MENG;ORIMOTO TAKASHI;ZHENG WEI;CHEUNG FRED TK |
分类号 |
H01L27/115;H01L21/8247 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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