| 摘要 |
A semiconductor memory device according to the present invention has a storage unit that includes an interlayer insulation film, a lower electrode layer embedded in the interlayer insulation film, and a recording layer and an upper electrode layer provided on the interlayer insulation film. When a predetermined current is passed to the storage unit, the recording layer is heated by substantially exceeding a melting point, and a cavity is formed near the interface between the recording layer and the lower electrode layer. As a result, the recording layer is physically separated from the lower electrode layer, and no current flows through the storage unit. When the recording layer is physically separated from the lower electrode layer, these layers cannot be returned to the contact state again. Therefore, information can be stored irreversibly.
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